ZnO–GaN tunnel junction for transparent ohmic contacts to p-GaN
نویسندگان
چکیده
The fabrication procedure of transparent n+-ZnO–p-GaN ohmic junctions has been described. The influence of consecutive technological steps on the electrical, structural and electronic properties of the junction has been studied. The results indicate that the predeposition of Au nucleation film plays a crucial role for the final contact properties. The ohmic behaviour is explained in terms of formation of a tunnel n+-ZnO–p-GaN junction. © 2003 Elsevier B.V. All rights reserved. PACS: 73.40 Gk; 73.40 Kp; 73.61 Ga; 79.60 Jv
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